BOJACK IRF510 MOSFET Transistors IRF510N 5.6A 100V N-Channel Power MOSFET TO-220AB (Pack of 10 Pcs)
BOJACK IRF510N MOSFET is a field effect transistor that can be widely used in analog circuits and digital circuits. Basic parameters: The IRF510N is available in a TO-220AB package On-state resistance Rds(on): 0.54 ohm Voltage Vgs highest: ±20V Number of stitches: 3 Operating Temperature:-55 °C to +175 °C Thermal resistance junction to case A: 0.29°C/W Voltage Vds Typical: 100V Current Id continuous: 5.6A Current Idm pulse: 20A Surface Mount Device: Through Hole Mounting Lead-free environmental protection
Product Features
- Transistor type: MOSFET
- Transistor polarity: N-Channel
- Drain current (Id Max): 5.6A
- Voltage Vds Max: 100V
- Power(Max): 43W
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