BOJACK IRF640 MOSFET IRF640N 18A 200V IRF640NPBF N-Channel Power MOSFET TO-220AB (Pack of 10 Pcs)
BOJACK IRF640 MOSFET is a field effect transistor that can be widely used in analog circuits and digital circuits. Basic parameters: The IRF640 is available in a TO-220AB package On-state resistance Rds(on): 0.15ohm Voltage Rds measurement: 10V Voltage Vgs highest: 4V Package Type: TO-220AB Number of stitches: 3 Thermal resistance junction to case A: 1°C/W Voltage Vgs Rds on Measurement: 10V Voltage Vds Typical: 200V Current Id continuous: 18A Current Idm pulse: 72A Surface Mount Device: Through Hole Mounting Threshold voltage, Vgs th Typical value: 4VThreshold voltage, Vgs th highest: 4V Lead-free environmental protection
Product Features
- Transistor type: MOSFET
- Transistor polarity: N-Channel
- Drain current (Id Max): 18A
- Voltage Vds Max: 200V
- Power(Max): 125W
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